SEMICONDUCTOR DEVICE

摘要

According to embodiments, a semiconductor device includes a first laminated nitride semiconductor layer in which first nitride semiconductor layers and second nitride semiconductor layers are alternately laminated; a third nitride semiconductor layer; a fourth nitride semiconductor layer; a drain electrode; a source electrode; and a gate electrode. The first nitride semiconductor layer is carbon-containing gallium nitride. The second nitride semiconductor layer contains aluminum indium nitride. The third nitride semiconductor layer is on the first laminated nitride semiconductor layer and includes gallium nitride. The fourth nitride semiconductor layer is on the third nitride semiconductor layer and contains aluminum gallium nitride. The drain electrode and the source electrode are on the fourth nitride semiconductor layer. The gate electrode is between the drain electrode and the source electrode.

主权项

1. A semiconductor device comprising:
a first laminated nitride semiconductor layer in which first nitride semiconductor layers of carbon-containing gallium nitride and second nitride semiconductor layers of aluminum indium nitride are alternately laminated; a third nitride semiconductor layer on the first laminated nitride semiconductor layer and of gallium nitride; a fourth nitride semiconductor layer on the third nitride semiconductor layer and of aluminum gallium nitride; a drain electrode and a source electrode on the fourth nitride semiconductor layer; and a gate electrode between the drain electrode and the source electrode.