Magnetic Memory and Method for Manufacturing Same

摘要

According to one embodiment, a magnetic memory includes a structure body including a first magnetic layer and a conductive layer, a second magnetic layer, a first electrode, a second electrode, a third magnetic layer, an intermediate layer, a third electrode, a fourth magnetic layer, and a circuit element. The first magnetic layer is disposed between the second magnetic layer and the conductive layer. The first electrode is connected to a first portion of the structure body. The intermediate layer is provided between the third magnetic layer and the second magnetic layer. The circuit element includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. The first semiconductor layer is connected to the first electrode. The second semiconductor layer is connected to the third magnetic layer. The third semiconductor layer is connected to the first semiconductor layer and the second semiconductor layer.

主权项

1. A magnetic memory, comprising:
a structure body including a first magnetic layer and a conductive layer; a second magnetic layer, the first magnetic layer being disposed between the second magnetic layer and the conductive layer; a first electrode electrically connected to a first portion of the structure body; a second electrode provided between the first magnetic layer and the second magnetic layer; a third magnetic layer; an intermediate layer provided between the third magnetic layer and the second magnetic layer; a third electrode electrically connected to a second portion of the structure body; a fourth magnetic layer provided to be insulated from a third portion of the structure body; and a circuit element including
a first semiconductor layer of a first conductivity type, the first semiconductor layer being electrically connected to the first electrode,a second semiconductor layer of the first conductivity type, the second semiconductor layer being electrically connected to the third magnetic layer, anda third semiconductor layer of a second conductivity type, the third semiconductor layer being electrically connected to the first semiconductor layer and the second semiconductor layer.