发明名称 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor substrate includes: 1) a first dielectric structure having a first surface and a second surface opposite the first surface; 2) a second dielectric structure having a third surface and a fourth surface opposite the third surface, wherein the fourth surface faces the first surface, the second dielectric structure defining a through hole extending from the third surface to the fourth surface, wherein a cavity is defined by the through hole and the first dielectric structure; 3) a first patterned conductive layer, disposed on the first surface of the first dielectric structure; and 4) a second patterned conductive layer, disposed on the second surface of the first dielectric structure and including at least one conductive trace. The first dielectric structure defines at least one opening to expose a portion of the second patterned conductive layer.
申请公布号 US2017077023(A1) 申请公布日期 2017.03.16
申请号 US201615364143 申请日期 2016.11.29
申请人 Advanced Semiconductor Engineering, Inc. 发明人 TSAI Li-Chuan;LEE Chih-Cheng
分类号 H01L23/498;H05K1/11;H01L21/48;H05K1/18 主分类号 H01L23/498
代理机构 代理人
主权项 1. A semiconductor substrate, comprising: a first dielectric structure having a first surface and a second surface opposite the first surface; a second dielectric structure having a third surface and a fourth surface opposite the third surface, wherein the fourth surface faces the first surface, the second dielectric structure defining a through hole extending from the third surface to the fourth surface, wherein a cavity is defined by the through hole and the first dielectric structure; a first patterned conductive layer, disposed on the first surface of the first dielectric structure; and a second patterned conductive layer, disposed on the second surface of the first dielectric structure and including at least one conductive trace, wherein the first dielectric structure defines at least one opening to expose a portion of the second patterned conductive layer.
地址 KAOHSIUNG TW