| 摘要 |
An infrared LED having a monolithic and stack-forming structure (10), comprising an n-doped base substrate (14) which comprises GaAs, a lower cover layer (16), an active layer (18) for the production of infrared radiation, an upper cover layer (20), a current distribution layer (24) and an upper contact layer (26), wherein the layers are arranged in the specified order, wherein a first tunnel diode (22) is provided between the upper cover layer (20) and the current distribution layer (24) and wherein the power distribution layer (24) predominantly has an n-doped Ga-containing layer with a Ga content of > 1%. |
