MAGNETIC MEMORY

摘要

A magnetic memory of an embodiment includes: a first nonmagnetic layer including a first and second faces; a first and second wirings disposed on a side of the first face; a third wiring disposed on a side of the second face; a first transistor, one of the source and the drain being connected to the first wiring, the other one being connected to the first nonmagnetic layer; a second transistor, one of source and drain being connected to the second wiring, the other one being connected to the first nonmagnetic layer; a magnetoresistive element disposed between the first nonmagnetic layer and the third wiring, a first terminal of the magnetoresistive element being connected to the first nonmagnetic layer; and a third transistor, one of source and drain of the third transistor being connected to the second terminal, the other one being connected to the third wiring.

主权项

1. A magnetic memory comprising:
a first nonmagnetic layer including a first face and a second face opposed to the first face, the first nonmagnetic layer being conductive; a first and second wirings disposed on a side of the first face of the first nonmagnetic layer, and intersecting with the first nonmagnetic layer respectively; a third wiring disposed on a side of the second face of the first nonmagnetic layer; a first transistor disposed between the first wiring and the first nonmagnetic layer, the first transistor including a source and a drain, one of the source and the drain being connected to the first wiring, the other one being connected to the first nonmagnetic layer; a second transistor disposed between the second wiring and the first nonmagnetic layer, the second transistor including a source and a drain, one of the source and the drain being connected to the second wiring, the other one being connected to the first nonmagnetic layer; a magnetoresistive element disposed between the first nonmagnetic layer and the third wiring, the magnetoresistive element including a first terminal and a second terminal, the first terminal being connected to the first nonmagnetic layer; and a third transistor including a source and a drain, one of the source and the drain being connected to the second terminal, the other one being connected to the third wiring.