SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a semiconductor memory device includes a stacked body, a semiconductor pillar, a memory film and a first contact portion. The stacked body includes a first electrode film, a second electrode film and an inter-electrode insulating film. The second electrode film is arranged with the first electrode film in a first direction. The inter-electrode insulating film is provided between the first electrode film and the second electrode film. The first electrode film includes a first edge portion. The first edge portion does not overlap the second electrode film in the first direction. The semiconductor pillar is provided in the stacked body. The semiconductor pillar extends in the first direction. The memory film is provided between the semiconductor pillar and the first electrode film. The first contact portion extending in the first direction and overlaps the first edge portion in the first direction.

主权项

1. A semiconductor memory device comprising:
a stacked body including a first electrode film, a second electrode film arranged with the first electrode film in a first direction, and an inter-electrode insulating film provided between the first electrode film and the second electrode film, the first electrode film including a first edge portion not overlapping the second electrode film in the first direction; a semiconductor pillar provided in the stacked body and extending in the first direction; a memory film provided between the semiconductor pillar and the first electrode film and provided between the semiconductor pillar and the second electrode film; and a first contact portion extending in the first direction, overlapping the first edge portion in the first direction and electrically connected to the first edge portion, the first contact portion including
a first core material portion extending in the first direction,a first conductive film provided around the first core material portion, the first conductive film including a first portion and a second portion, the second portion being disposed between the first portion and the first edge portion, anda second conductive film provided around the first portion, a first length of the first conductive film along the first direction being longer than a second length of the second conductive film along the first direction.