STABLE MULTIPLE THRESHOLD VOLTAGE DEVICES ON REPLACEMENT METAL GATE CMOS DEVICES

摘要

A technique for a multiple voltage threshold transistor structure is provided. A narrow channel and long channel are formed on a fin. An epitaxial layer is formed on the fin, and an interlayer dielectric layer is formed on the epitaxial layer. Spacers on the fin define the narrow channel and the long channel. A high-k dielectric material is deposited in the narrow and long channels. A metal layer is deposited on the high-k dielectric material in the narrow and long channels. A height of the high-k dielectric material in the narrow channel is recessed. The metal layer is removed from the narrow and long channels. A work function metal is deposited in the narrow and long channels. A gate conduction metal is deposited to fill the narrow channel and long channel. A capping layer is deposited on the top surface of the structure.

主权项

1. A method of forming a multiple threshold voltage transistor structure, the method comprising:
forming a first transistor having a high-k dielectric material with a first height; and forming a second transistor having the high-k dielectric material with a second height, the first height of the high-k dielectric material being different from the second height.