MONOLITHIC MICROWAVE INTEGRATED CIRCUITS

摘要

Low Q associated with passive components of monolithic integrated circuits (ICs) when operated at microwave frequencies can be avoided or mitigated using high resistivity (e.g., ≧100 Ohm-cm) semiconductor substrates and lower resistance inductors for the IC. This eliminates significant in-substrate electromagnetic coupling losses from planar inductors and interconnections overlying the substrate. The active transistor(s) are formed in the substrate proximate the front face. Planar capacitors are also formed over the front face of the substrate. Various terminals of the transistor(s), capacitor(s) and inductor(s) are coupled to a ground plane on the rear face of the substrate using through-substrate-vias to minimize parasitic resistance. Parasitic resistance associated with the planar inductors and heavy current carrying conductors is minimized by placing them on the outer surface of the IC where they can be made substantially thicker and of lower resistance. The result is a monolithic microwave IC previously unobtainable.

主权项

1. A monolithic microwave integrated circuit, comprising:
a semiconductor substrate having a front surface, a rear surface, and a bulk resistivity equal to or greater than 100 Ohm-cm; a transistor proximate to the front surface of the semiconductor substrate, wherein the transistor has a doped common region in the semiconductor substrate; multiple conductive through-substrate vias (TSVs) extending from the front surface to the rear surface of the semiconductor substrate; electrical interconnections overlying the front surface of the semiconductor substrate to electrically couple the transistor with at least some of the multiple conductive TSVs; and a reference node supported by a rear surface of the semiconductor substrate and electrically coupled with at least some of the multiple conductive TSVs.