SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device includes a first gate electrode provided in a jumper region of a substrate and extending in a first direction, first source/drain regions provided at both sides of the first gate electrode, and a connecting contact electrically connecting the first gate electrode and the first source/drain regions to each other. The connecting contact includes first sub-contacts disposed at both sides of the first gate electrode and connected to the first source/drain regions, and a second sub-contact extending in a second direction intersecting the first direction. The second sub-contact is connected to the first sub-contacts and is in contact with a top surface of the first gate electrode. In the first direction, each of the first sub-contacts has a first width and the second sub-contact has a second width smaller than the first width.

主权项

1. A semiconductor device comprising:
a substrate; a gate electrode on the substrate, the gate electrode extending in a first direction; source/drain regions at both sides of the gate electrode; and a connecting contact that electrically connects the gate electrode and the source/drain regions to each other, wherein the connecting contact comprises: first sub-contacts at both sides of the gate electrode, the first sub-contacts connected to the source/drain regions; and a second sub-contact extending in a second direction, the second direction intersecting the first direction when viewed from a plan view, the second sub-contact connected to the first sub-contacts, the second sub-contact in contact with a top surface of the gate electrode, wherein each of the first sub-contacts has a first width in the first direction, wherein the second sub-contact has a second width in the first direction, and wherein the second width is smaller than the first width.