发明名称 CHIP PACKAGE AND MANUFACTURING METHOD THEREOF
摘要 A chip package includes a chip, a laser stopper, an isolation layer, a redistribution layer, an insulating layer, and a conductive structure. The chip has a conductive pad, a first surface, and a second surface opposite to the first surface. The conductive pad is located on the first surface. The second surface has a first though hole to expose the conductive pad. The laser stopper is located on the conductive pad. The isolation layer is located on the second surface and in the first though hole. The isolation layer has a third surface opposite to the second surface. The isolation layer and the conductive pad have a second though hole together, such that the laser stopper is exposed through the second though hole. The redistribution layer is located on the third surface, the sidewall of the second though hole, and the laser stopper.
申请公布号 US2017076981(A1) 申请公布日期 2017.03.16
申请号 US201615364160 申请日期 2016.11.29
申请人 XINTEC INC. 发明人 LIU Chien-Hung;WEN Ying-Nan;LEE Shih-Yi;YIU Ho-Yin
分类号 H01L21/768;H01L21/78;H01L23/00;H01L23/48;H01L21/268;H01L21/263 主分类号 H01L21/768
代理机构 代理人
主权项 1. A manufacturing method of a chip package, comprising: (a) providing a wafer and a laser stopper, wherein the chip has a conductive pad, a first surface, and a second surface opposite to the first surface, and the conductive pad is located on the first surface, and the laser stopper is located on the conductive pad; (b) temporarily bonding a support element to the first surface of the wafer; (c) forming a first though hole in the second surface of the wafer, such that the conductive pad is exposed through the first though hole; (d) forming an isolation layer on the second surface of the wafer and in the first though hole, wherein the isolation layer has a third surface opposite to the second surface; (e) using a laser for penetrating the isolation layer and the conductive pad and forming a second though hole, wherein the laser is shielded by the laser stopper, and the laser stopper is exposed through the second though hole; and (f) electroplating a redistribution layer on the third surface of the isolation layer, a sidewall of the second though hole, and the laser stopper that is in the second though hole.
地址 Taoyan City TW
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