发明名称 SEMICONDUCTOR DEVICE
摘要 Provided is a semiconductor device including a semiconductor substrate; a dummy trench that is formed on a front surface side of the semiconductor substrate; an emitter electrode that is formed above a front surface of the semiconductor substrate and includes a recessed portion that is a recess in an outer periphery thereof, as seen in a planar view; a dummy pad that is electrically connected to the dummy trench and has at least a portion thereof formed within the recessed portion, as seen in the planar view; and a dummy wire that electrically connects the emitter electrode and the dummy pad.
申请公布号 US2017077004(A1) 申请公布日期 2017.03.16
申请号 US201615247934 申请日期 2016.08.26
申请人 FUJI ELECTRIC CO., LTD. 发明人 ONOZAWA Yuichi
分类号 H01L21/66;H01L29/06;H01L23/373;H01L29/66;H01L21/78;H01L21/48;H01L29/739;H01L29/10 主分类号 H01L21/66
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor substrate; a dummy trench that is formed on a front surface side of the semiconductor substrate; an emitter electrode that is formed above a front surface of the semiconductor substrate and includes a recessed portion that is a recess in an outer periphery thereof, as seen in a planar view; a dummy pad that is electrically connected to the dummy trench and has at least a portion thereof formed within the recessed portion, as seen in the planar view; and a dummy wire that electrically connects the emitter electrode and the dummy pad.
地址 Kanagawa JP