发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
Provided is a semiconductor device including a semiconductor substrate; a dummy trench that is formed on a front surface side of the semiconductor substrate; an emitter electrode that is formed above a front surface of the semiconductor substrate and includes a recessed portion that is a recess in an outer periphery thereof, as seen in a planar view; a dummy pad that is electrically connected to the dummy trench and has at least a portion thereof formed within the recessed portion, as seen in the planar view; and a dummy wire that electrically connects the emitter electrode and the dummy pad. |
申请公布号 |
US2017077004(A1) |
申请公布日期 |
2017.03.16 |
申请号 |
US201615247934 |
申请日期 |
2016.08.26 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
ONOZAWA Yuichi |
分类号 |
H01L21/66;H01L29/06;H01L23/373;H01L29/66;H01L21/78;H01L21/48;H01L29/739;H01L29/10 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; a dummy trench that is formed on a front surface side of the semiconductor substrate; an emitter electrode that is formed above a front surface of the semiconductor substrate and includes a recessed portion that is a recess in an outer periphery thereof, as seen in a planar view; a dummy pad that is electrically connected to the dummy trench and has at least a portion thereof formed within the recessed portion, as seen in the planar view; and a dummy wire that electrically connects the emitter electrode and the dummy pad. |
地址 |
Kanagawa JP |