COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN

摘要

The compound according to the present invention is represented by a specific formula. The compound according to the present invention has a structure according to the specific formula, and therefore can be applied to a wet process and is excellent in heat resistance and etching resistance. In addition, the compound according to the present invention has such a specific structure, and therefore has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration and also a high solvent solubility. Therefore, the compound according to the present invention can be used to form an underlayer film whose degradation is suppressed at high-temperature baking and which is also excellent in etching resistance to oxygen plasma etching or the like. Furthermore, the compound is also excellent in adhesiveness with a resist layer and therefore can form an excellent resist pattern.

主权项

1. A compound represented by the following formula (1): wherein R1 is a 2n-valent group having 1 to 30 carbon atoms, each of R2 to R5 is independently a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a thiol group or a hydroxyl group, wherein at least one R4 and/or at least one R5 is a hydroxyl group and/or a thiol group, each of m2 and m3 is independently an integer of 0 to 8, each of m4 and m5 is independently an integer of 0 to 9, wherein at least one of m4 and m5 is an integer of 1 to 9, n is an integer of 1 to 4, and each of p2 to p5 is independently an integer of 0 to 2.