METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Embodiments of the inventive concepts provide a method for manufacturing a three-dimensional semiconductor memory device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3.;

主权项

1. A method for manufacturing a semiconductor device, the method comprising:
forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate; forming a first photoresist pattern on the stack structure; and etching a first part of the stack structure to form a stepwise structure using the first photoresist pattern as an etch mask, wherein the first photoresist pattern comprises a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein each of “R1,” “R2,” and “R3” independently represents a hydrocarbon having a carbon number of from 1 to 20, “p” is an integral number of from 1 to 10, “q” is an integral number of from 1 to 10, and “r” is an integral number of from 1 to 10, and wherein the copolymer has a molecular weight of 1,000 to 100,000.