SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a semiconductor memory device includes a structural body, first to fourth pillars, a first interconnection, a second interconnection, a third interconnection, and a fourth interconnection. The first to fourth pillars provides within the structural body extending along the first direction. A first distance between the first pillar and the first interconnection is greater than a second distance between the third pillar and the third interconnection. The first distance is greater than a third distance between the fourth pillar and the fourth interconnection. A fourth distance between the second pillar and the second interconnection is greater than the second distance. The fourth distance is greater than the third distance.

主权项

1. A semiconductor memory device comprising:
a structural body including a plurality of electrode layers arranged in a first direction; a first pillar, a second pillar, a third pillar, and a fourth pillar provided in the structural body, the first to fourth pillars extending along the first direction in the structural body; a first interconnection extending in a second direction and electrically connected to the first pillar, the second direction crossing the first direction; a second interconnection extending in the second direction and electrically connected to the second pillar; a third interconnection extending in the second direction and electrically connected to the third pillar; and a fourth interconnection extending in the second direction and electrically connected to the fourth pillar; a first distance between the first pillar and the first interconnection in the first direction being greater than a second distance between the third pillar and the third interconnection in the first direction, and the first distance being greater than a third distance between the fourth pillar and the fourth interconnection in the first direction, and a fourth distance between the second pillar and the second interconnection in the first direction being greater than the second distance, the fourth distance being greater than the third distance.