SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF

摘要

A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

主权项

1. A method of forming a semiconductor arrangement comprising:
forming a gate over a first set of fins, a second set of fins, and a shallow trench isolation (STI) material separating the first set of fins from the second set of fins; forming a first dielectric layer over the first set of fins, the second set of fins, and the shallow trench isolation (STI) material; forming a first opening in the first dielectric layer, wherein the first opening extends over the STI material and exposes a first metal connect in contact with the first set of fins and a second metal connect in contact with a second set of fins; and forming a third metal connect in the first opening, wherein the third metal connect electrically couples the first metal connect to the second metal connect and is disposed lateral to the gate.