发明名称 Mask and pattern forming method
摘要 According to one embodiment, a mask includes a substrate, first and second pattern portions. The substrate includes a first surface, and the substrate is light transmissive. The first pattern portion includes first optical members. The first optical members are provided on the first surface. A light transmittance of the first optical members is lower than a light transmittance of the substrate. A distance between the adjacent two first optical members is a first distance. The second pattern portion includes second optical members. The second optical members are provided on the first surface. A light transmittance of the second optical members is lower than the light transmittance of the substrate. A distance between the adjacent two second optical members is a second distance. A first phase of a light penetrating the first pattern portion is different from a second phase of a light penetrating the second pattern portion.
申请公布号 US2017076950(A1) 申请公布日期 2017.03.16
申请号 US201514998379 申请日期 2015.12.28
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SATO Takashi;TANAKA Satoshi
分类号 H01L21/308;G03F1/50 主分类号 H01L21/308
代理机构 代理人
主权项 1. A mask comprising: a substrate including a first surface, the substrate being light transmissive; a first pattern portion including a plurality of first optical members provided on the first surface and arranged in a first direction along the first surface, a light transmittance of the first optical members being lower than a light transmittance of the substrate, a distance between the adjacent two first optical members being a first distance; and a second pattern portion including a plurality of second optical members provided on the first surface and arranged in the first direction, a light transmittance of the second optical members being lower than the light transmittance of the substrate, a distance between the adjacent two second optical members being a second distance different from the first distance, a first phase of a light penetrating the first pattern portion after a first light being incident on the first pattern portion being different from a second phase of a light penetrating the second pattern portion after the first light being incident on the second pattern portion.
地址 Tokyo JP