发明名称 |
Mask and pattern forming method |
摘要 |
According to one embodiment, a mask includes a substrate, first and second pattern portions. The substrate includes a first surface, and the substrate is light transmissive. The first pattern portion includes first optical members. The first optical members are provided on the first surface. A light transmittance of the first optical members is lower than a light transmittance of the substrate. A distance between the adjacent two first optical members is a first distance. The second pattern portion includes second optical members. The second optical members are provided on the first surface. A light transmittance of the second optical members is lower than the light transmittance of the substrate. A distance between the adjacent two second optical members is a second distance. A first phase of a light penetrating the first pattern portion is different from a second phase of a light penetrating the second pattern portion. |
申请公布号 |
US2017076950(A1) |
申请公布日期 |
2017.03.16 |
申请号 |
US201514998379 |
申请日期 |
2015.12.28 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SATO Takashi;TANAKA Satoshi |
分类号 |
H01L21/308;G03F1/50 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
1. A mask comprising:
a substrate including a first surface, the substrate being light transmissive; a first pattern portion including a plurality of first optical members provided on the first surface and arranged in a first direction along the first surface, a light transmittance of the first optical members being lower than a light transmittance of the substrate, a distance between the adjacent two first optical members being a first distance; and a second pattern portion including a plurality of second optical members provided on the first surface and arranged in the first direction, a light transmittance of the second optical members being lower than the light transmittance of the substrate, a distance between the adjacent two second optical members being a second distance different from the first distance, a first phase of a light penetrating the first pattern portion after a first light being incident on the first pattern portion being different from a second phase of a light penetrating the second pattern portion after the first light being incident on the second pattern portion. |
地址 |
Tokyo JP |