MEMORY CONTROLLER, STORAGE DEVICE, AND READ RETRY METHOD

摘要

According to one embodiment, a temperature of a non-volatile memory or an ambient temperature of the non-volatile memory is acquired. A distribution of a threshold voltage, which is corrected according to the acquired temperature, is acquired from the non-volatile memory. Read voltages related to the reading of data are detected from the distribution. Error correction is performed for data read from the non-volatile memory, using the read voltages. The detected read voltages are separately corrected on the basis of the acquired temperature when the error correction has failed.

主权项

1. A memory controller comprising:
a temperature acquiring processor that acquires a temperature of a non-volatile memory or an ambient temperature of the non-volatile memory; a distribution acquiring processor that acquires a distribution of a threshold voltage, which is corrected according to the temperature acquired by the temperature acquiring processor, from the non-volatile memory; a detector that detects read voltages related to the reading of data from the distribution; a decoder that performs error correction for data read from the non-volatile memory, using the read voltages; and a temperature correcting processor that separately corrects the read voltages detected by the detector on the basis of the temperature acquired by the temperature acquiring processor when the error correction has failed.