| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
According to one embodiment, a semiconductor memory device includes: first and second memory cells each including a variable resistance element; a first sense amplifier having a first input terminal coupled to the first memory cell; a second sense amplifier having a first input terminal coupled to the second memory cell; and a first current generator including a first resistance element coupled to a second input terminal of the first sense amplifier and a second input terminal of the second sense amplifier, and generating a first current supplied to the first sense amplifier or the second sense amplifier. The first sense amplifier is set to an active state and the second sense amplifier is set to an inactive state in a read operation of the first memory cell. |
| 申请公布号 |
US2017076791(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615065846 |
申请日期 |
2016.03.09 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKAHASHI Masahiro;FUJITA Katsuyuki |
| 分类号 |
G11C13/00;G11C11/16 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
first and second memory cells each including a variable resistance element; a first sense amplifier having a first input terminal coupled to the first memory cell; a second sense amplifier having a first input terminal coupled to the second memory cell; and a first current generator including a first resistance element coupled to a second input terminal of the first sense amplifier and a second input terminal of the second sense amplifier, and generating a first current which is based on the first resistance element and is supplied to the first sense amplifier or the second sense amplifier, wherein the first sense amplifier is set to an active state and the second sense amplifier is set to an inactive state in a read operation of the first memory cell. |
| 地址 |
Tokyo JP |
