发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 According to one embodiment, a semiconductor memory device includes first and second interconnect parts, and a second interconnect connection part. The first interconnect part includes a first core part, and a first interconnect layer. The first interconnect layer includes a first surrounding region and a first extended region. The second interconnect part includes a second core part, and a second interconnect layer. The second interconnect layer includes a second surrounding region and a second extended region. The second extended connection part overlaps a part of the first extended region in the third direction, overlaps the second core part in the first direction, and is electrically connected to the second core part. The second extended surrounding part is provided around the second extended connection part and contains a material contained in the first surrounding region.
申请公布号 US2017077398(A1) 申请公布日期 2017.03.16
申请号 US201615061328 申请日期 2016.03.04
申请人 Kabushiki Kaisha Toshiba 发明人 ARAYASHIKI Yusuke
分类号 H01L45/00 主分类号 H01L45/00
代理机构 代理人
主权项 1. A semiconductor memory device, comprising: a first interconnect part; a second interconnect part separated from the first interconnect part in a first direction; and a second interconnect connection part overlapping a part of the second interconnect part in the first direction, the first interconnect part including a first core part, anda first interconnect layer, the first interconnect layer including a first surrounding region provided around the first core part, anda first extended region connected to the first surrounding region and extending in a second direction crossing the first direction, the second interconnect part including a second core part, anda second interconnect layer, the second interconnect layer including a second surrounding region provided around the second core part, anda second extended region connected to the second surrounding region and extending in a third direction crossing the first direction and the second direction, the second interconnect connection part including a second extended connection part overlapping a part of the first extended region in the third direction, overlapping the second core part in the first direction, and electrically connected to the second core part, anda second extended surrounding part provided around the second extended connection part and containing a material contained in the first surrounding region.
地址 Minato-ku JP