发明名称 SEMICONDUCTOR DEVICE HAVING SUPPORTERS AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device includes storage electrodes on a substrate and one or more supporters configured to couple one or more portions of the storage electrodes. The semiconductor device may include multiple non-intersecting supporters extending in parallel to a surface of the substrate. At least one supporter may have an upper surface that is substantially coplanar with upper surfaces of the storage electrodes. The storage electrodes may include a capacitor dielectric layer that conformally covers one or more surfaces of the storage electrodes and one or more supporters. A storage electrode may include upper and lower storage electrodes coupled together. The upper and lower storage electrodes may have different horizontal widths.
申请公布号 US2017077102(A1) 申请公布日期 2017.03.16
申请号 US201615083819 申请日期 2016.03.29
申请人 Samsung Electronics Co., Ltd. 发明人 KIM Kyung-Eun;KIM Yongkwan;JANG Semyeong;CHOI Jaehyoung;HWANG Yoosang;KIM Bong-Soo
分类号 H01L27/108;H01L29/06;H01L29/45;H01L23/522 主分类号 H01L27/108
代理机构 代理人
主权项 1. A semiconductor device, comprising: a plurality of via structures on a substrate; a plurality of storage electrodes on separate ones of the via structures, each of the storage electrodes including a first portion,a second portion on the first portion,a third portion on the second portion, andan upper surface; a first supporter configured to connect first portions of the storage electrodes; a second supporter configured to connect second portions of the storage electrodes; and a third supporter configured to connect third portions of the storage electrodes, the third supporter having an upper surface, the upper surface of the third supporter being substantially coplanar with the upper surfaces of the storage electrodes.
地址 Suwon-si KR