发明名称 |
BACKSIDE COUPLED SYMMETRIC VARACTOR STRUCTURE |
摘要 |
A symmetric varactor structure may include a first varactor component. The first varactor component may include a gate operating as a second plate, a gate oxide layer operating as a dielectric layer and a body operating as a first plate of an area modulating capacitor. In addition, doped regions may surround the body of the first varactor component. The first varactor component may be supported on a backside by an isolation layer. The symmetric varactor structure may also include a second varactor component electrically coupled to the backside of the first varactor component through a backside conductive layer. |
申请公布号 |
US2017077093(A1) |
申请公布日期 |
2017.03.16 |
申请号 |
US201615298124 |
申请日期 |
2016.10.19 |
申请人 |
QUALCOMM Incorporated |
发明人 |
KIM Daeik Daniel;BERDY David Francis;LAN Je-Hsiung Jeffrey;YUN Changhan Hobie;KIM Jonghae |
分类号 |
H01L27/08;H01L29/93;H01L21/78;H01L29/66 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating a symmetric varactor structure, comprising:
fabricating a first varactor component adjacent to a second varactor component of the symmetric varactor structure on an isolation layer; thinning the symmetric varactor structure to expose a body of the first varactor component and a body of the second varactor component; and depositing and patterning a conductive layer to couple the body of the first varactor component and the body of the second varactor component. |
地址 |
San Diego CA US |