发明名称 BACKSIDE COUPLED SYMMETRIC VARACTOR STRUCTURE
摘要 A symmetric varactor structure may include a first varactor component. The first varactor component may include a gate operating as a second plate, a gate oxide layer operating as a dielectric layer and a body operating as a first plate of an area modulating capacitor. In addition, doped regions may surround the body of the first varactor component. The first varactor component may be supported on a backside by an isolation layer. The symmetric varactor structure may also include a second varactor component electrically coupled to the backside of the first varactor component through a backside conductive layer.
申请公布号 US2017077093(A1) 申请公布日期 2017.03.16
申请号 US201615298124 申请日期 2016.10.19
申请人 QUALCOMM Incorporated 发明人 KIM Daeik Daniel;BERDY David Francis;LAN Je-Hsiung Jeffrey;YUN Changhan Hobie;KIM Jonghae
分类号 H01L27/08;H01L29/93;H01L21/78;H01L29/66 主分类号 H01L27/08
代理机构 代理人
主权项 1. A method of fabricating a symmetric varactor structure, comprising: fabricating a first varactor component adjacent to a second varactor component of the symmetric varactor structure on an isolation layer; thinning the symmetric varactor structure to expose a body of the first varactor component and a body of the second varactor component; and depositing and patterning a conductive layer to couple the body of the first varactor component and the body of the second varactor component.
地址 San Diego CA US