METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

An abnormal part (component) is identified for a short time. A method of manufacturing a semiconductor device according to one embodiment includes a step of performing a plasma treatment on a semiconductor substrate by using plasma equipment, and a step of inspecting the plasma equipment. The inspection step includes a step of measuring impedance or reflection intensity at each frequency by varying a frequency of an input signal while regarding a RF power supplying line of the plasma equipment as an electrical circuit. Further, the inspection step includes a step of calculating characteristics of impedance or reflection intensity in an arrival location of the signal with respect to an arrival time of the signal by performing an inverse Fourier transform on a measurement result.

主权项

1. A method of manufacturing a semiconductor device comprising steps of:
(a) performing a plasma treatment on a semiconductor substrate by using plasma equipment; and (b) inspecting the plasma equipment, wherein the step of (b) includes steps of: (b1) measuring impedance or reflection intensity at each frequency by varying a frequency of an input signal while regarding a RF power supplying line of the plasma equipment as an electrical circuit; and (b2) calculating characteristics of impedance or reflection intensity in an arrival location of the signal with respect to an arrival time of the signal by performing an inverse Fourier transform on a measurement result in the step of (b1).