发明名称 MEMORY DEVICE AND CONTROL METHOD THEREOF
摘要 A memory device is provided. The memory device includes a plurality of memory banks, at least one buffer bank and a controller. Each memory bank has a bank index and includes a plurality of bank memory units for storing data associated with a logical address corresponding to the bank index. The buffer bank includes a plurality of buffer memory units. The controller receives a read command and a write command in a first clock cycle, wherein the read command and the write command are requesting to access a specific memory bank among the memory banks. If an access request of the read command and the write command exceeds a bandwidth limitation of the specific memory bank, the controller utilizes the buffer bank to accomplish the read command and the write command.
申请公布号 US2017075571(A1) 申请公布日期 2017.03.16
申请号 US201514851208 申请日期 2015.09.11
申请人 Media Tek Inc. 发明人 CHEN Chun-Hung;CHEN Yi-Hung
分类号 G06F3/06;G06F12/08;G11C11/418 主分类号 G06F3/06
代理机构 代理人
主权项 1. A memory device, comprising: a plurality of memory banks, each having a bank index and comprising a plurality of bank memory units for storing data associated with a logical address corresponding to the bank index; at least one buffer bank, each comprising a plurality of buffer memory units; and a controller, receiving at least one read command and at least one write command in a first clock cycle, wherein the at least one read command and the at least one write command are requesting to access a specific memory bank among the memory banks, if an access request of the at least one read command and the at least one write command exceeds a bandwidth limitation of the specific memory bank, the controller utilizes the at least one buffer bank to accomplish the at least one read command and the at least one write command.
地址 Hsin-Chu TW