发明名称 METHOD FOR REMOVING TARGET OBJECT
摘要 There is provided a method for selectively removing a plurality of target objects by using a stripping solution without causing damage to an underlying material, the target objects including a resist used as a mask material for dry etching and a transformed layer and a deposited film formed during the dry etching, the stripping solution including a first composition, a second composition, and a third composition, and the method including continuously changing the composition of the stripping solution from the first composition to the second composition and then from the second composition to the third composition.
申请公布号 US2017073579(A1) 申请公布日期 2017.03.16
申请号 US201615258920 申请日期 2016.09.07
申请人 CANON KABUSHIKI KAISHA 发明人 Hiramoto Atsushi;Terasaki Atsunori;Fukumoto Yoshiyuki;Kanri Ryoji;Kubota Masahiko
分类号 C09K13/00;B41J2/16 主分类号 C09K13/00
代理机构 代理人
主权项 1. A method for removing a target object with a stripping solution, the target object including a mask material, a transformed layer, and a deposited film, the mask material being formed on a substrate by using a resist, the transformed layer being formed on a surface of the mask material in a step of forming a pattern on the substrate by dry etching with the mask material, the deposited film being formed on a surface of the substrate and a surface of the transformed layer, and the stripping solution including: a first composition capable of removing the deposited film, a second composition capable of removing the transformed layer, and a third composition capable of removing the mask material, the method comprising: a removal step including: a substep of removing the deposited film with the stripping solution having the first composition,a substep of continuously changing the composition of the stripping solution from the first composition to the second composition at least prior to the exposure of the transformed layer,a substep of removing the transformed layer with the stripping solution having the second composition,a substep of continuously changing the composition of the stripping solution from the second composition to the third composition with at least the mask material remaining, anda substep of removing the mask material with the stripping solution having the third composition, wherein the stripping solution contains at least one of hydroxylamine and an amino alcohol, wherein the concentration of hydroxylamine in the stripping solution is not changed or is reduced as the removal step proceeds, and wherein the concentration of the amino alcohol in the stripping solution is not changed or is increased as the removal step proceeds.
地址 Tokyo JP