| 发明名称 |
ARRANGEMENT AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. The multi-purpose layer may be formed of an ohmic material, and the etch stop layer may be of a first conductivity type of a first doping concentration. |
| 申请公布号 |
US2017076961(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615361108 |
申请日期 |
2016.11.25 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Zundel Markus;Schmenn Andre;Sojka Damian;Goetz Isabella;Stranzl Gudrun;Werner Sebastian;Fischer Thomas;Ahrens Carsten;Fuergut Edward |
| 分类号 |
H01L21/56;H01L27/02;H01L23/498;H01L21/78;H01L23/31 |
主分类号 |
H01L21/56 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a die in a substrate, comprising:
providing a substrate having a front side and a back side, the front side defining a die region within the substrate; forming a multi-purpose layer defining a back side of the die region; and forming an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate; wherein the multi-purpose layer is formed of an ohmic material; and wherein the etch stop layer is of a first conductivity type of a first doping concentration. |
| 地址 |
Neubiberg DE |
