OXIDE SINTERED BODY, SPUTTERING TARGET, AND OXIDE SEMICONDUCTOR THIN FILM OBTAINED USING SPUTTERING TARGET

摘要

An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium and gallium as oxides, contains nitrogen, and does not contain zinc. The gallium content in terms of the atomic ratio Ga/(In+Ga) is between 0.20 and 0.60, inclusive, and substantially no GaN phase is included. Furthermore, the sintered oxide preferably has no Ga2O3 phase. An amorphous oxide semiconductor thin film formed using this oxide sintered body as a sputtering target yields a carrier density of 3.0×1018 cm−3 or less, and a carrier mobility of 10 cm2 V−1 sec−1 or more.

主权项

1. An oxide sintered body comprising indium and gallium as oxides, wherein
a gallium content is 0.20 or more and 0.60 or less in terms of Ga/(In+Ga) atomic ratio, the oxide sintered body contains nitrogen but does not contain zinc, and the oxide sintered body does not substantially include a GaN phase having a wurtzite-type structure.