ACCESS LINE MANAGEMENT IN A MEMORY DEVICE

摘要

Memory devices are configured to store a number of access line biasing patterns to be applied during a memory device operation performed on a particular row of memory cells in the memory device. Memory devices are further configured to support modification of the stored bias patterns, providing flexibility in biasing access lines through changes to the bias patterns stored in the memory device. Methods and devices further facilitate performing memory device operations under multiple biasing conditions to evaluate and characterize the memory device by adjustment of the stored bias patterns without requiring an associated hardware change to the memory device.

主权项

1. A memory device, comprising:
an array of memory cells; one or more first registers, each first register associated with a respective one of a plurality of access lines; one or more second registers, each second register associated with a respective one of the plurality of access lines; control circuitry, wherein the control circuitry is configured to load each first register with respective first bias information responsive to the selection of a particular access line of the plurality of access lines for a memory device operation when the memory device is in a first mode of operation; and driver circuitry configured to bias each of the access lines of the plurality of access lines responsive to the respective first bias information when the memory device is in the first mode of operation and bias each of the access lines of the plurality of access lines responsive to respective second bias information when the memory device is in a second mode of operation; wherein the first bias information is determined using the second mode of operation.