发明名称 Programming of Nonvolatile Memory with Verify Level Dependent on Memory State and Programming Loop Count
摘要 A series of programming pulses, where the individual pulses are identified by a pulse number, is used to program a page of memory cells in parallel. After receiving a pulse, the memory cells under verification are verified to determine if they have been programmed to their respective target states. The memory cells that have been verified are inhibited from further programming while those memory cells not verified will be further programmed by subsequent programming pulses. The pulsing, verification and inhibition continue until all memory cells of the page have been program-verified. Each verify level used in the verification is a function of both the target state and the pulse number. This allows adjustment of the verify level to compensate for changes in sensing, including those due to variation in source line loading during the course of programming.
申请公布号 US2017076802(A1) 申请公布日期 2017.03.16
申请号 US201514853733 申请日期 2015.09.14
申请人 SanDisk Technologies, LLC. 发明人 Mokhlesi Nima
分类号 G11C16/14;G11C16/28;G11C16/34 主分类号 G11C16/14
代理机构 代理人
主权项
地址 Plano TX US