VERTICAL SLIT TRANSISTOR WITH OPTIMIZED AC PERFORMANCE

摘要

A vertical slit transistor includes raised source, drain, and channel regions in a semiconductor substrate. Two gate electrodes are positioned adjacent respective sidewalls of the semiconductor substrate. A dielectric material separates the gate electrodes from the source and drain regions.

主权项

1. A method, comprising:
forming a dielectric layer overlying a semiconductor substrate; removing a section of the dielectric material to create an open slot in the dielectric material extending in a first direction; epitaxially growing a second semiconductor material in the slot from the semiconductor substrate, the semiconductor material extending in a first direction forming a first gate dielectric of a transistor on a first sidewall of a layer of semiconductor material; removing a portion of the dielectric material and the second semiconductor material using a single mask to leave a raised second semiconductor region and dielectric material region abutting each other; forming a gate dielectric of a transistor on a first sidewall of a layer of the second semiconductor material and on a first side wall of the dielectric material; and forming a first gate electrode of the transistor on the gate dielectric, the first gate electrode having a sidewall separated from the first sidewall of the layer of semiconductor material by the first gate dielectric, the first gate dielectric being positioned on the sidewall of the first gate electrode.