METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND DEVICE FOR HEATING SAME

摘要

A method for manufacturing a nitride semiconductor substrate (1), wherein said method comprises a preparation step (S10) for preparing a sapphire substrate (2) and a buffer layer formation step (S16) for forming an AlN buffer layer (3) on the sapphire substrate (2). The buffer layer formation step (S16) comprises: a group III nitride semiconductor formation step (S16a) for forming a precursor (3a) of the AlN buffer layer on the sapphire substrate (2); and an annealing step (S16b) for annealing the sapphire substrate (2) on which the precursor (3a) of the AlN buffer layer has been formed in an airtight state in which the main surface of the precursor (3a) of the AlN buffer layer is covered by a cover member (sapphire substrate (102), etc.) for inhibiting the component of the precursor (3a) of the AlN buffer layer from dissociating from the main surface of the formed precursor (3a) of the AlN buffer layer.