METHOD FOR PLASMA-ENHANCED DEPOSITION OF THIN ALUMINUM OXIDE LAYERS ON SEMICONDUCTOR WAFERS FOR MANUFACTURING WAFER SOLAR CELLS, AND IN-LINE PECVD PLANT

摘要

The invention relates to a method for plasma-enhanced deposition of thin aluminum oxide layers on semiconductor wafers for manufacturing wafer solar cells, said method involving the following steps: making available an in-line PECVD system comprising at least one plasma chamber (1) inside which a plasma electrode (10) is arranged, a vacuum pump system (11), and an in-line conveying device (12) for conveying semiconductor wafers in their lying position along an in-line conveying direction (T); placing semiconductor wafers on the in-line conveying device (12); introducing the in-line conveying device (12) along with the semiconductor wafers into the plasma chamber (1); introducing an oxygen-containing gas into the activated plasma chamber (1) at a first gas inlet (13); introducing an aluminum-containing gas into the activated plasma chamber (1) at another gas inlet (14) located at a distance from the first gas inlet (13), the other gas inlet (14) being closer to the in-line conveying device (12) and further away from the plasma electrode (10) than the first gas inlet (13); moving the in-line conveying device (12) through the plasma chamber (1) along the in-line conveying direction (T); characterized in that the aluminum-containing gas is introduced into the plasma chamber (1) exclusively or predominantly upstream of the plasma electrode (10) or exclusively or predominantly downstream of the plasma electrode (10) in the direction of the in-line conveying direction (T). The invention further relates to a corresponding in-line PECVD plant.