| 发明名称 |
BiSbTeSe-based Thermoelectric Material |
| 摘要 |
The present invention discloses a BiSbTeSe-based thermoelectric material, whose general formula is BimSbnTexSeyMz; wherein, m=0.4-0.6, n=1.4-1.6, x=2.7-2.9, y=0.075-0.3, z=0.02-0.15, M is one or more elements of S, Si, P, Ge, Sn, Ce, Li, I, Br, Al, Cu, Ag, Yb, Tm, La, Gd and Dy. The BiSbTeSe-based thermoelectric material is prepared through powder mixing, alloy smelting and other steps. The BiSbTeSe-based thermoelectric material in the present invention has the advantages of low thermal conductivity and good thermoelectric properties, which expands the application area of thermoelectric material. |
| 申请公布号 |
US2017077374(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201514935452 |
申请日期 |
2015.11.09 |
| 申请人 |
Leizig (Guangdong) Thermoelectric Technologies Co., Ltd. |
发明人 |
Luo Yiping;Lin Bin |
| 分类号 |
H01L35/16;C22C1/02;C22C1/05;H01L35/18;H01L35/34 |
主分类号 |
H01L35/16 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A BiSbTeSe-based thermoelectric material, wherein, the thermoelectric material's general formula is BimSbnTexSeyMz; wherein, m=0.4-0.6, n=1.4-1.6, x=2.7-2.9, y=0.075-0.3, z=0.02-0.15, M is one or more elements of S, Si, P, Ge, Sn, Ce, Li, I, Br, Al, Cu, Ag, Yb, Tm, La, Gd and Dy. |
| 地址 |
Yingde CN |
