发明名称 |
PHOTOVOLTAICS ON SILICON |
摘要 |
Structures including crystalline material disposed in openings defined in a non-crystalline mask layer disposed over a substrate. A photovoltaic cell may be disposed above the crystalline material. |
申请公布号 |
US2017077330(A1) |
申请公布日期 |
2017.03.16 |
申请号 |
US201615360044 |
申请日期 |
2016.11.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Li Jizhong;Lochtefeld Anthony J.;Sheen Calvin;Cheng Zhiyuan |
分类号 |
H01L31/0352;H01L31/18;H01L31/0687;H01L31/0693;H01L31/047 |
主分类号 |
H01L31/0352 |
代理机构 |
|
代理人 |
|
主权项 |
1. A structure for use in photonic applications, the structure comprising:
a mask layer disposed above a top surface of a substrate and including an opening extending from a top surface of the mask layer to the top surface of the substrate; a crystalline material disposed in the opening; and a photonic device disposed above the crystalline material, the photonic device having an active junction including a surface that extends in a direction substantially away from the top surface of the substrate. |
地址 |
HSIN-CHU TW |