发明名称 PHOTOVOLTAICS ON SILICON
摘要 Structures including crystalline material disposed in openings defined in a non-crystalline mask layer disposed over a substrate. A photovoltaic cell may be disposed above the crystalline material.
申请公布号 US2017077330(A1) 申请公布日期 2017.03.16
申请号 US201615360044 申请日期 2016.11.23
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 Li Jizhong;Lochtefeld Anthony J.;Sheen Calvin;Cheng Zhiyuan
分类号 H01L31/0352;H01L31/18;H01L31/0687;H01L31/0693;H01L31/047 主分类号 H01L31/0352
代理机构 代理人
主权项 1. A structure for use in photonic applications, the structure comprising: a mask layer disposed above a top surface of a substrate and including an opening extending from a top surface of the mask layer to the top surface of the substrate; a crystalline material disposed in the opening; and a photonic device disposed above the crystalline material, the photonic device having an active junction including a surface that extends in a direction substantially away from the top surface of the substrate.
地址 HSIN-CHU TW