| 发明名称 |
Vertical Field Effect Transistor with Biaxial Stressor Layer |
| 摘要 |
A vertical field effect device includes a substrate and a vertical channel including InxGa1-xAs on the substrate. The vertical channel includes a pillar that extends from the substrate and includes opposing vertical surfaces. The device further includes a stressor layer on the opposing vertical surfaces of the vertical channel. The stressor layer includes a layer of epitaxial crystalline material that is epitaxially formed on the vertical channel and that has lattice constant in a vertical plane corresponding to one of the opposing vertical surfaces of the vertical channel that is greater than a corresponding lattice constant of the vertical channel. |
| 申请公布号 |
US2017077304(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615132960 |
申请日期 |
2016.04.19 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Obradovic Borna;Bowen Chris;Rakshit Titash;Dharmendar Palle;Rodder Mark |
| 分类号 |
H01L29/78;H01L29/423;H01L29/66;H01L29/786 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A vertical field effect device, comprising:
a substrate; a vertical channel comprising InxGa1-xAs, wherein the vertical channel comprises a pillar that extends from the substrate and includes opposing vertical surfaces; a stressor layer on the opposing vertical surfaces of the vertical channel, wherein the stressor layer comprises a layer of epitaxial crystalline material that is epitaxially formed on the vertical channel and that has lattice constant in a vertical plane corresponding to one of the opposing vertical surfaces of the vertical channel that is greater than a corresponding lattice constant of the vertical channel; a dielectric layer on the stressor layer; and a gate electrode on the dielectric layer. |
| 地址 |
Suwon-si KR |
