FINFET DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device includes a semiconductor substrate, a plurality of semiconductor fins and a source/drain structure. The semiconductor fins and the source/drain structure are located on the semiconductor substrate, and the source/drain structure is connected to the semiconductor fins. The source/drain structure has a top portion with a W-shape cross section for forming a contact landing region. The semiconductor device may further include a plurality of capping layers located on a plurality of recessed portions of the top portion.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a source structure located on the semiconductor substrate; a drain structure located on the semiconductor substrate; and a plurality of semiconductor fins protruding from the semiconductor substrate, wherein the semiconductor fins are spaced apart from each other, and connect the source structure and the drain structure; wherein each of the source structure and the drain structure has a top portion with a W-shape cross section for forming a contact landing region.