| 发明名称 |
NONVOLATILE STORAGE DEVICE, SEMICONDUCTOR ELEMENT, AND CAPACITOR |
| 摘要 |
A nonvolatile storage device of an embodiment includes a first wiring layer extending in a first direction, a second wiring layer extending in a second direction intersecting with the first direction, a conductive layer between the first wiring layer and the second wiring layer at an intersection of the first wiring layer and the second wiring layer, and a resistance change region including at least one of an oxide, a nitride, and an oxynitride in the first wiring layer. The resistance change region exists in the first wiring layer including an interface between the first wiring layer and the conductive layer. |
| 申请公布号 |
US2017077178(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615251448 |
申请日期 |
2016.08.30 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
MIYAZAKI Hisao;SAKAI Tadashi;YAMAZAKI Yuichi;KATAGIRI Masayuki |
| 分类号 |
H01L27/24;H01L45/00;H01L49/02;H01L23/528;H01L23/532 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile storage device comprising:
a first wiring layer extending in a first direction; a second wiring layer extending in a second direction intersecting with the first direction; a conductive layer between the first wiring layer and the second wiring layer at an intersection of the first wiring layer and the second wiring layer; and a resistance change region including at least one of an oxide, a nitride, and an oxynitride in the first wiring layer, wherein the resistance change region exists in the first wiring layer including an interface between the first wiring layer and the conductive layer. |
| 地址 |
Minato-ku JP |
