VARIABLE RESISTANCE MEMORY

摘要

According to one embodiment, a variable resistance memory includes first and second semiconductor regions in a layer; a memory cell on the first semiconductor region, the memory cell including a first transistor having a first gate connected to a word line and a memory element, the word line extending in a first direction parallel to a surface of the layer; and a second transistor on the second semiconductor region and connected to the memory cell via a bit line, the bit line extending a second direction parallel to the surface of the layer, and the second direction intersecting the first direction. The second semiconductor region extends in a third direction parallel to the surface of the substrate and the third direction intersects the first and second directions.

主权项

1. A variable resistance memory comprising:
first and second semiconductor regions provided in a semiconductor layer; a first memory cell provided on the first semiconductor region, the first memory cell including a first transistor and a first memory element, the first transistor having a first gate connected to a word line, the word line extending in a first direction parallel to a surface of the semiconductor layer; and a second transistor provided on the second semiconductor region and connected to one end of the first memory cell via a first bit line, the first bit line extending a second direction parallel to the surface of the semiconductor layer, and the second direction intersecting the first direction, wherein the second semiconductor region extends in a third direction parallel to the surface of the semiconductor layer and the third direction intersects the first and second directions.