| 主权项 |
1. A semiconductor device comprising:
a substrate; a first structure provided on the substrate, the first structure including a first electrode layer and a first insulator, the first structure having a first terrace on a surface of the first insulator; a second structure provided on the first structure except a part on the first terrace, the second structure including a second electrode layer and a second insulator, the second structure having a second terrace on a surface of the second insulator; a step provided between the first terrace and the second terrace; an insulating layer provided on the first terrace and the second terrace; a first pillar provided in the insulating layer and the first structure, the first pillar reaching the substrate via the first terrace; a second pillar provided in the insulating layer, the second structure, and the first structure, the second pillar reaching the substrate via the second terrace, the second pillar being adjacent to the first pillar via the step; a first contact portion provided in the insulating layer and the first insulator, the first contact portion electrically connected to the first electrode layer via the first terrace; and a second contact portion provided in the insulating layer and the second insulator, the second contact portion electrically connected to the second electrode layer via the second terrace, the first contact portion located between the step and the first pillar, and the step located between the first contact portion and the second pillar. |
