NONVOLATILE MEMORY DEVICE MANUFACTURING METHOD

摘要

A method of manufacturing a nonvolatile memory device includes sequentially forming, on a first wiring layer extending in a first direction, a first layer containing a first metal and a second layer containing a second metal into which the first metal can diffuse. The method further includes oxidizing the first layer and the second layer, removing oxygen from the oxidized first layer by annealing, forming a conductive third layer on the oxidized second layer after removing oxygen from the oxidized first layer, and forming a second wiring layer on the third layer. The second wiring layer extends in a second direction crossing the first wiring layer.

主权项

1. A method of manufacturing a nonvolatile memory device comprising:
sequentially forming, on a first wiring layer that extends in a first direction, a first layer containing a first metal and a second layer containing a second metal into which the first metal can diffuse; oxidizing the first layer and the second layer; selectively removing oxygen from the oxidized first layer by annealing; forming a conductive third layer on the oxidized second layer after selectively removing oxygen from the oxidized first layer; and forming a second wiring layer on the third layer, the second wiring layer extending in a second direction crossing the first direction.