SEMICONDUCTOR DEVICE

摘要

A semiconductor device that includes a bipolar transistor, wherein a third opening, through which a pillar bump and a second wiring line, which is electrically connected to an emitter layer, contact each other, is shifted in a longitudinal direction of the emitter layer away from a position at which the third opening would be directly above the emitter layer. The third opening is arranged, with respect to the emitter layer, such that an end portion of the emitter layer in the longitudinal direction of the emitter layer and the edge of the opening of the third opening are substantially aligned with each other.

主权项

1. A semiconductor device comprising:
a heterojunction bipolar transistor; wherein the bipolar transistor includes
a collector layer,a base layer on the collector layer,an emitter layer on the base layer,an emitter wiring line electrically connected to the emitter layer,an insulating film covering the emitter wiring line and having an opening through which the emitter wiring line is exposed, anda bump on the insulating film so as to bury the opening and electrically connected to the emitter layer via the emitter wiring line, and wherein the emitter wiring line covers the entirety of the emitter layer in plan view.