CASCODE SEMICONDUCTOR PACKAGE AND RELATED METHODS

摘要

A semiconductor package includes an electrically conductive base (base) having a source connector. A drain connector and a gate connector are electrically coupled with the base. A depletion mode gallium nitride field-effect transistor (GaN FET) and an enhancement mode laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOS FET) are also coupled with the base. The gate connector and a gate contact of the LDMOS FET are both included in a first electrical node, the source connector and a source contact of the LDMOS FET are both included in a second electrical node, and the drain connector and a drain contact of the GaN FET are both included in a third electrical node. The GaN FET and LDMOS FET together form a cascode that operates as an enhancement mode amplifier. The semiconductor package does not include an interposer between the GaN FET and the base or between the LDMOS FET and the base.

主权项

1. A semiconductor package, comprising:
an electrically conductive base (base) comprising a source connector; a drain connector electrically coupled with the base; a gate connector electrically coupled with the base; a gallium nitride field-effect transistor (GaN FET) coupled with the base, wherein the semiconductor package does not comprise an interposer between the GaN FET and the base, and; a semiconductor field-effect transistor (FET) coupled with the base and electrically coupled with the GaN FET, wherein the semiconductor package does not comprise an interposer between the GaN FET and the base, the GaN FET and the FET together forming a cascode.