发明名称 |
AMPLIFIER |
摘要 |
An amplifier includes a package, a transistor chip having a gate pad and a drain pad formed elongately, the transistor chip being provided in the package, and a plurality of drain bonding wires connected to the drain pad, wherein the plurality of drain bonding wires include a first outer-most bonding wire connected to one of two end portions of the drain pad, a second outer-most bonding wire connected to the other of the two end portions of the drain pad, and an intermediate bonding wire interposed between the first outer-most bonding wire and the second outer-most bonding wire, each of the plurality of drain bonding wires is longer than 1 mm, and the first outer-most bonding wire and the second outer-most bonding wire have loop heights larger than a loop height that the intermediate bonding wire has. |
申请公布号 |
US2017077012(A1) |
申请公布日期 |
2017.03.16 |
申请号 |
US201615156596 |
申请日期 |
2016.05.17 |
申请人 |
Mitsubishi Electric Corporation |
发明人 |
KOSAKA Naoki;IMAI Shohei;OKAMURA Atsushi;MIWA Shinichi;CHOMEI Kenichiro;SASAKI Yoshinobu;HORIGUCHI Kenichi |
分类号 |
H01L23/495;H03F3/16 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
1. An amplifier comprising:
a package; a transistor chip having a gate pad and a drain pad formed elongately, the transistor chip being provided in the package; and a plurality of drain bonding wires connected to the drain pad, wherein the plurality of drain bonding wires include a first outer-most bonding wire connected to one of two end portions of the drain pad, a second outer-most bonding wire connected to the other of the two end portions of the drain pad, and an intermediate bonding wire interposed between the first outer-most bonding wire and the second outer-most bonding wire; each of the plurality of drain bonding wires is longer than 1 mm; and the first outer-most bonding wire and the second outer-most bonding wire have loop heights larger than a loop height that the intermediate bonding wire has. |
地址 |
Tokyo JP |