| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
According to one embodiment, a method of manufacturing a semiconductor device includes forming an overhanging portion in a perimeter region of a front surface side of a wafer provided with a semiconductor element on the front surface thereof by removing a portion of the wafer in perimeter region of the wafer from the front surface side of the wafer, bonding the front surface of the wafer to a supporting substrate, and thinning the wafer to less than 200 μm in thickness by grinding the wafer from a rear surface side thereof. |
| 申请公布号 |
US2017076969(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615233920 |
申请日期 |
2016.08.10 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIRONO Takashi;FUJII Mika;HIGASHI Kazuyuki |
| 分类号 |
H01L21/683;H01L23/00;H01L23/544;H01L21/306;H01L21/304;H01L21/268 |
主分类号 |
H01L21/683 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming an overhanging projection in a perimeter region of a front surface side of a wafer provided with a semiconductor element on the front surface thereof by removing a portion of the perimeter region of the wafer from the front surface of the wafer; bonding the front surface of the wafer to a supporting substrate; and thinning the wafer to less than 200 μm in thickness by grinding the wafer from a rear surface side thereof. |
| 地址 |
Tokyo JP |
