| 发明名称 |
CASIMIR EFFECT MEMORY CELL |
| 摘要 |
A digital memory device includes a moveable element that is configured to move between a first stable position and a second stable position, where the moveable element comprises a first conducting area. The digital memory device further includes a second conducting area on the surface of a substrate. At the first stable position of the moveable element, a first gap exists between the first conducting area and the second conducting area. At the second stable position of the moveable element, a second gap that is smaller than the first gap exists between the first conducting area and the second conducting area. In at least the second stable position, an attractive Casimir force between the moveable element and the substrate holds the moveable element in the stable position. |
| 申请公布号 |
US2017076822(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201514853044 |
申请日期 |
2015.09.14 |
| 申请人 |
Elwha LLC |
发明人 |
Caldeira Kenneth G.;Hagelstein Peter L.;Hyde Roderick A.;Ishikawa Muriel Y.;Jung Edward K.Y.;Kare Jordin T.;Myhrvold Nathan P.;Pendry John Brian;Schurig David;Tegreene Clarence T.;Tuckerman David B.;Weaver Thomas Allan;Whitmer Charles;Wood,, JR. Lowell L. |
| 分类号 |
G11C23/00 |
主分类号 |
G11C23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A digital memory device, comprising:
a moveable element configured to move between a first stable position and a second stable position, wherein the moveable element comprises a first conducting area; and a second conducting area on the surface of a substrate; wherein at the first stable position of the moveable element, a first gap exists between the first conducting area and the second conducting area, and wherein at the second stable position of the moveable element, a second gap that is larger than the first gap exists between the first conducting area and the second conducting area, and wherein in at least the first stable position an attractive Casimir force between the moveable element and the substrate holds the moveable element in the stable position; wherein an area of the moveable element is between 10 nanometers2 and 1000 nanometers2. |
| 地址 |
Bellevue WA US |
