THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR AND DISPLAY PANEL

摘要

A thin-film transistor, a manufacturing method therefor and a display panel. The thin-film transistor comprises a metal electrode (4). The steps of forming the metal electrode comprise: forming a first material layer (2) on a base substrate (1); patterning the first material layer, and forming a groove pattern (21) in the first material layer, wherein the groove pattern matches the pattern of the metal electrode to be formed; forming the metal electrode in the groove pattern, so that there is a gap between the edge of the metal electrode and the edge of the groove pattern; and forming a protection pattern (51) on a substrate on which the metal electrode is formed, wherein the protection pattern covers the metal electrode and the edge thereof. The metal electrode has the protection pattern thereon, which has the function of effectively protecting conductive metal.