SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

This silicon carbide epitaxial substrate has a silicon carbide single-crystal substrate and a silicon carbide layer. A first ratio, which is the ratio of the absolute value of the difference between the dopant density of a first end region and the dopant density of a central region to the average of the dopant density of the first end region and the dopant density of the central region, does not exceed 40%. A second ratio, which is the ratio of the absolute value of the difference between the dopant density of a second end region and the dopant density of the central region to the average of the dopant density of the second end region and the dopant density of the central region, does not exceed 40%.