| 发明名称 |
LITHOGRAPHIC FILM FORMATION MATERIAL, COMPOSITION FOR LITHOGRAPHIC FILM FORMATION, LITHOGRAPHIC FILM, PATTERN FORMATION METHOD, AND PURIFICATION METHOD |
| 摘要 |
The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1):
wherein, each R° independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4. |
| 申请公布号 |
EP3141959(A1) |
申请公布日期 |
2017.03.15 |
| 申请号 |
EP20150788887 |
申请日期 |
2015.05.08 |
| 申请人 |
Mitsubishi Gas Chemical Company, Inc. |
发明人 |
MAKINOSHIMA, Takashi;ECHIGO, Masatoshi |
| 分类号 |
G03F7/11;G03F7/26;H01L21/027 |
主分类号 |
G03F7/11 |
| 代理机构 |
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