縦型ＪＦＥＴ制限型シリコンカーバイドパワー金属酸化膜半導体電界効果トランジスタおよび縦型ＪＦＥＴ制限型シリコンカーバイド金属酸化膜半導体電界効果トランジスタを製造する方法

摘要

Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) includes an n-type silicon carbide drift layer (12), a first p-type silicon carbide region (20) adjacent the drift layer and having a first n-type silicon carbide region (24) therein, an oxide layer (28) on the drift layer, and an n-type silicon carbide limiting region (26) disposed between the drift layer and a portion of the first p-type region. The limiting region has a carrier concentration that is greater than the carrier concentration of the drift layer. Methods of fabricating silicon carbide MOSFET devices are also provided.