发明名称 |
CONDUCTIVE INTERCONNECT STRUCTURES INCORPORATING NEGATIVE THERMAL EXPANSION MATERIALS AND ASSOCIATED SYSTEMS, DEVICES, AND METHODS |
摘要 |
Semiconductor devices having interconnects incorporating negative expansion (NTE) materials are disclosed herein. In one embodiment a semiconductor device includes a substrate having an opening that extends at least partially through the substrate. A conductive material having a positive coefficient of thermal expansion (CTE) partially fills the opening. A negative thermal expansion (NTE) having a negative CTE also partially fills the opening. In one embodiment, the conductive material includes copper and the NTE material includes zirconium tungstate. |
申请公布号 |
EP3031075(A4) |
申请公布日期 |
2017.03.15 |
申请号 |
EP20140834233 |
申请日期 |
2014.07.30 |
申请人 |
Micron Technology, Inc. |
发明人 |
LI, Hongqi;JINDAL, Anurag;LU, Jin;RAMALINGAM, Shyam |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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