发明名称 |
PN-STRUCTURED GATE DEMODULATION PIXEL |
摘要 |
A novel photo-sensitive element for electronic imaging purposes and, in this context, is particularly suited for time-of-flight 3D imaging sensor pixels. The element enables charge-domain photo-detection and processing based on a single gate architecture. Certain regions for n and p-doping implants of the gates are defined. This kind of single gate architecture enables low noise photon detection and high-speed charge transport methods at the same time. A strong benefit compared to known pixel structures is that no special processing steps are required such as overlapping gate structures or very high-ohmic poly-silicon deposition. In this sense, the element relaxes the processing methods so that this device may be integrated by the use of standard CMOS technology for example. Regarding time-of-flight pixel technology, a major challenge is the generation of lateral electric fields. The element allows the generation of fringing fields and large lateral electric fields. |
申请公布号 |
EP2828891(B1) |
申请公布日期 |
2017.03.15 |
申请号 |
EP20130719601 |
申请日期 |
2013.03.20 |
申请人 |
Heptagon Micro Optics Pte. Ltd. |
发明人 |
BUETTGEN, Bernhard;LEHMANN, Michael;VAELLO, Bruno |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|